Gallium Oxide

Descriptio

Gallium Oxide Ga₂O₃99,99%, 99,999% et 99,9999% 4N 5N 6N, pulvis albus solidus in gradibus crystallis α et β, CAS 12024-21-4, pondus hypotheticum 187,44, punctum 1740°C liquescens, in aqua solubile sed in acida plerisque solubile; est materia oxydatus diaphanus semiconductor, cum excellentibus proprietatibus globi perquam 4.9eV amplioris, et promptitudinis magnae magnitudinis, altae qualitatis subjectae indigenae productae e mole adulta unius cristalli.Gallium Oxide Ga₂O₃Prospectus latas habet applicationis in industria optoelectronic, sicut iacuit insulating pro materia semiconductor Ga-fundata, sicut filtra ultraviolacea, sicut chemicae speculatoria oxygenii, claustrum insulating pro strictis coniunctionibus, semiconductor machinis opticis et applicationibus ceramicis.Gallium oxydatum etiam adhibitum est, quia in tenuem emittens diodes LEDs fluorescentibus pulveris, alte puritatis gerentis, necnon in lasers et aliis materiis lucidis etc.

Delivery

Gallium Oxide or Gallium Trioxide Ga₂O₃ in α vel β forma crystallographica cum puritate 99,99%, 99.999% et 99.9999% （4N 5N 6N）at Minmetalis occidentalis (SC) Corporatio magnitudine pulveris D50 ≤ 4.0micron，-80mesh （≤0.18micron）or liberari potest. 50-100 reticulum （0.15-0.30micron）in sarcinis 1kg, 2kg in utrem polyethylenae, seu 1kg, 2kg, 5kg, in vacuo aluminio compositi sacculi cum cistae lobortis extra 10kg aut 20kg retiarii, aut ad solutiones perfectas specificationes. .

nunc Inquisitionis

Singula

Tags

Technical Specification

Ga₂O₃

Aspectus	Crystallum album
M. Pondus	187.44
Densitas	-
Liquescens punctum	1740 °C
CAS Non.	12024-21-4

Nec.	Item		Standard Specification
1	PuritasGa₂O₃≥		immunditia(ICP-MS PPM Max each)
2	4N	99.99%	Mg/Ni/Mn 3.0, Cr/Ca/Co/Cd/Cu/Sn 5.0, Pb 8.0, Na/Fe/Al 10	Totalis ≤100
	5N	99.999%	Mg/Ni/Mn 0.1, Cr/ Ca/Cu/Cd/Cu/Sn 0.5, Na/Al/Fe 1.0, Pb 1.5	Totalis ≤10
	6N	99.9999%	Mn/Ca/Co/Cd 0.05, Pb/Al/Fe/Cu/Sn 0.1	Totalis ≤1.0
3	Forma crystallographica		α seu β genus
4	Magnitudo		D₅₀≤ 4um, -80 reticulum vel reticulum puluerem 50-100
5	stipare		1kg, 2kg in utre plastico, vel 1kg, 2kg, 5kg, in aluminio pera composito cum cistae lobortis extra

Gallium Oxide Ga₂O₃vel Gallium Trioxide Ga₂O₃in α vel β forma crystallographica cum puritate 99,99%, 99.999% et 99.9999% （4N 5N 6N）at Minmetalis occidentalis (SC) Corporatio magnitudine pulveris D50 ≤ 4.0micron，-80mesh （≤0.18micron）or liberari potest. 50-100 reticulum （0.15-0.30micron）in sarcinis 1kg, 2kg in utrem polyethylenae, vel 1kg, 2kg, 5kg in vacuo aluminio pera com- posito cum cistae cistae lobortis foris, aut ad solutiones perfectas specificationes nativus.

Gallium Oxide Ga₂O₃vel Gallium Trioxide amplas exspectationes applicationis in industria optoelectronic habet, sicut iacuit insulating pro ga-substructio in semiconductore materiae, sicut filtra ultraviolacea, sicut speculatoria oxygenii chemici, claustrum insulating pro strictis coniunctionibus, semiconductor machinis opticis et applicationibus ceramicis.Gallium oxydatum etiam adhibitum est, quia in tenuem emittens diodes LEDs fluorescentibus pulveris, alte puritatis gerentis, necnon in lasers et aliis materiis lucidis etc.